BUK7575-55,127 NXP Semiconductors, BUK7575-55,127 Datasheet - Page 3

• Manufacturer Part Number: BUK7575-55,127
• Description: MOSFET N-CH 55V 19.7A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7575-55,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 19.7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 61W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934050390127; BUK7575-55; BUK7575-55

Philips Semiconductors
AVALANCHE LIMITING VALUE
April 1998
TrenchMOS
Standard level FET
SYMBOL PARAMETER
W
ID% = 100 I
DSS
120
110
100
Fig.2. Normalised continuous drain current.
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
Drain-source non-repetitive
unclamped inductive turn-off
energy
20
PD% = 100 P
20
D
/I
D 25 ˚C
40
40
transistor
60
60
= f(T
80
80
Tmb / C
Tmb / C
mb
D
/P
); conditions: V
D 25 ˚C
Normalised Current Derating
100
100
Normalised Power Derating
120
120
= f(T
140
140
mb
)
160
160
GS
CONDITIONS
I
V
D
180
180
GS
10 V
= 10 A; V
= 10 V; R
3
DD
GS
25 V;
= 50 ; T
ID/A
I
0.01
100
D
10
0.1
10
1
1
& I
1
Fig.3. Safe operating area. T
Zth/ (K/W)
Fig.4. Transient thermal impedance.
0.5
0.2
0.1
RDS(ON) = VDS/ID
0.05
0.02
0
DM
1.0E-06
mb
Z
= f(V
th j-mb
= 25 ˚C
DS
= f(t); parameter D = t
); I
0.0001
DM
MIN.
single pulse; parameter t
t/s
-
10
0.01
DC
P
TYP.
VDS/V
D
-
Product specification
t
p
BUK7575-55
T
mb
1
MAX.
= 25 ˚C
p
D =
/T
30
t
T
p
t
Rev 1.100
tp =
1 us
10us
100 us
1 ms
10ms
100ms
100
UNIT
mJ
p
100