BUK7575-55,127 NXP Semiconductors, BUK7575-55,127 Datasheet - Page 4

• Manufacturer Part Number: BUK7575-55,127
• Description: MOSFET N-CH 55V 19.7A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7575-55,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 19.7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 61W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934050390127; BUK7575-55; BUK7575-55

Philips Semiconductors
April 1998
TrenchMOS
Standard level FET
ID/A
50
40
30
20
10
Fig.5. Typical output characteristics, T
ID/A
I
D
0
120
110
100
Fig.6. Typical on-state resistance, T
90
80
70
60
50
0
= f(V
25
20
15
10
5
0
0
RDS(ON)/mOhm
0
Fig.7. Typical transfer characteristics.
VGS/V =
GS
1
) ; conditions: V
R
2
5
I
DS(ON)
16
D
= f(V
2
Tj/C =
= f(I
14
10
transistor
DS
3
4
175
ID/A
); parameter V
D
6
); parameter V
12
VDS/V
4
VGS/V
15
DS
6.5
= 25 V; parameter T
5
6
25
7
VGS/V =
20
6
GS
8
9 10
GS
8
7
j
25
j
= 25 ˚C .
= 25 ˚C .
8
10
30
10.0
9
9.0
4.0
9.5
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
j
4
Fig.9. Normalised drain-source on-state resistance.
a = R
gfs/S
V
Fig.8. Typical transconductance, T
2.5
1.5
0.5
9
8
7
6
5
4
3
2
-100
5
4
3
2
1
0
GS(TO)
-100
0
2
1
VGS(TO) / V
a
DS(ON)
max.
min.
typ.
g
Fig.10. Gate threshold voltage.
= f(T
fs
-50
/R
-50
= f(I
5
DS(ON)25 ˚C
j
); conditions: I
BUK959-60
D
); conditions: V
0
0
Tmb / degC
10
= f(T
Tj / C
50
50
ID/A
Rds(on) normlised to 25degC
j
); I
D
D
= 1 mA; V
15
100
= 10 A; V
100
DS
Product specification
= 25 V
BUK7575-55
150
BUK759-60
150
j
20
= 25 ˚C .
DS
GS
= V
= 10 V
Rev 1.100
200
200
GS
25