BSP315P-E6327 Infineon Technologies, BSP315P-E6327 Datasheet
BSP315P-E6327
Specifications of BSP315P-E6327
BSP315PINTR
Related parts for BSP315P-E6327
BSP315P-E6327 Summary of contents
Page 1
SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode Avalanche rated Logic Level rated Type Package PG-SOT-223 BSP315 P Maximum Ratings, Parameter Continuous drain current ° °C A Pulsed drain ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage V = ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max D Input capacitance - MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Dynamic Characteristics Gate to source charge -1. Gate to drain charge -1. Gate charge total V = ...
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Power Dissipation tot A BSP 315 P 1.9 W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area ...
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Typ. output characteristics parameter µs p BSP 315 P -2 tot -2.4 -2.2 -2.0 -1.8 -1.6 -1.4 ...
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Drain-source on-resistance DS(on) j parameter -1. BSP 315 P 2.1 1.8 1.6 1.4 1.2 98% 1.0 0.8 typ 0.6 0.4 0.2 0.0 -60 - Typ. capacitances ...
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Avalanche Energy parameter -1. 105 Drain-source breakdown voltage ...
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