BSP315P-E6327 Infineon Technologies, BSP315P-E6327 Datasheet - Page 9

• Manufacturer Part Number: BSP315P-E6327
• Description: MOSFET P-CH 60V 1.17A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP315P-E6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.17A
• Vgs(th) (max) @ Id: 2V @ 160µA
• Gate Charge (qg) @ Vgs: 7.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP315P; BSP315PINTR

BSP 315 P
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© Infineon Technologies AG 1999
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Rev.1.4
Page 9
2007-02-08