BSP315P-E6327 Infineon Technologies, BSP315P-E6327 Datasheet - Page 5

• Manufacturer Part Number: BSP315P-E6327
• Description: MOSFET P-CH 60V 1.17A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP315P-E6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.17A
• Vgs(th) (max) @ Id: 2V @ 160µA
• Gate Charge (qg) @ Vgs: 7.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP315P; BSP315PINTR

Power Dissipation
P
Safe operating area
I
parameter : D = 0 , T
D
Rev.1.4
tot
= f ( V
-10
-10
-10
-10
W
A
= f ( T
1.9
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-1
-2
1
0
-10
0
BSP 315 P
BSP 315 P
DS
-1
A
20
)
)
40
-10
60
0
A
= 25 °C
80
100
-10
120
1
°C
DC
V
T
V
t p = 280.0µs
A
DS
160
1 ms
10 ms
-10
2
Page 5
Drain current
I
parameter : V
Transient thermal impedance
Z
parameter : D = t
D
thJC
K/W
= f ( T
10
10
-1.3
-1.1
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
10
10
10
A
0.0
-1
-2
= f ( t
2
1
0
10
0
A
BSP 315 P
BSP 315 P
-5
)
10
20
p
single pulse
)
-4
GS
10
40
-3
p
10
/ T
60
10V
-2
10
80
-1
10
100
0
10
BSP 315 P
1
120
2007-02-08
10
D = 0.50
2
°C
0.20
0.10
0.05
0.02
0.01
T
t
p
A
s
160
10
4