BSS131E6327 Infineon Technologies, BSS131E6327 Datasheet - Page 4

• Manufacturer Part Number: BSS131E6327
• Description: MOSFET N-CH 240V .11A SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS131E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 110mA
• Vgs(th) (max) @ Id: 1.8V @ 56µA
• Gate Charge (qg) @ Vgs: 3.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 77pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS131; BSS131E6327XT; BSS131INTR; BSS131XTINTR; BSS131XTINTR; SP000011168

Rev. 2.2
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
10
0.4
0.3
0.2
0.1
DS
-1
-2
-3
0
0
A
0
); T
1
)
limited by on-state
resistance
A
p
=25 °C; D =0
40
10
T
V
A
DS
80
[°C]
[V]
100 ms
DC
10 ms
1 ms
100
100 µs
120
30 µs
1000
160
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
0.12
0.08
0.06
0.04
0.02
=f(t
0.1
10
10
10
10
0.05
0.5
0.2
0.1
0.02
single pulse
0.01
A
0
3
2
1
0
); V
10
p
0
)
-5
GS
≥10 V
10
p
/T
-4
40
10
-3
T
t
A
10
p
80
[°C]
[s]
-2
10
-1
120
10
2009-08-18
BSS131
0
160
10
1