BSS131E6327 Infineon Technologies, BSS131E6327 Datasheet - Page 5

• Manufacturer Part Number: BSS131E6327
• Description: MOSFET N-CH 240V .11A SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS131E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 110mA
• Vgs(th) (max) @ Id: 1.8V @ 56µA
• Gate Charge (qg) @ Vgs: 3.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 77pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS131; BSS131E6327XT; BSS131INTR; BSS131XTINTR; BSS131XTINTR; SP000011168

Rev. 2.2
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
0.4
0.3
0.2
0.1
0.4
0.3
0.2
0.1
DS
GS
0
0
0
); T
0
); |V
j
=25 °C
DS
GS
1
|>2|I
1
D
2
|R
10 V
DS(on)max
V
3
V
2
GS
DS
5 V
7 V
[V]
[V]
4
4.5 V
3
5
6
2.3 V
3.9 V
2.7 V
3.3 V
4
7
page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
0.25
0.15
0.05
0.3
0.2
0.1
25
23
21
19
17
15
13
11
D
=f(I
0
9
7
5
); T
0.0
0
D
2.3 V
j
); T
=25 °C
GS
j
=25 °C
0.1
2.7 V
0.1
0.2
I
I
D
D
0.2
3.3 V
[A]
[A]
0.3
0.3
4.5 V
2009-08-18
3.9 V
BSS131
7 V
0.4
5 V
10 V
0.4