BSS131E6327 Infineon Technologies, BSS131E6327 Datasheet - Page 7

• Manufacturer Part Number: BSS131E6327
• Description: MOSFET N-CH 240V .11A SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS131E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 110mA
• Vgs(th) (max) @ Id: 1.8V @ 56µA
• Gate Charge (qg) @ Vgs: 3.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 77pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS131; BSS131E6327XT; BSS131INTR; BSS131XTINTR; BSS131XTINTR; SP000011168

Rev. 2.2
13 Typ. gate charge
V
parameter: V
GS
=f(Q
12
10
8
6
4
2
0
0
gate
); I
DD
D
=0.1 A pulsed
0.5
1
Q
48 V
gate
[nC]
1.5
192 V
120V
2
2.5
page 7
14 Drain-source breakdown voltage
V
BR(DSS)
300
290
280
270
260
250
240
230
220
210
200
-60
=f(T
j
); I
-20
D
=250 µA
20
T
j
[°C]
60
100
2009-08-18
BSS131
140