BSS131E6327 Infineon Technologies, BSS131E6327 Datasheet - Page 8

• Manufacturer Part Number: BSS131E6327
• Description: MOSFET N-CH 240V .11A SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS131E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 110mA
• Vgs(th) (max) @ Id: 1.8V @ 56µA
• Gate Charge (qg) @ Vgs: 3.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 77pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS131; BSS131E6327XT; BSS131INTR; BSS131XTINTR; BSS131XTINTR; SP000011168

Rev. 2.2
Package Outline:
Footprint:
Packaging:
page 8
BSS131
2009-08-18