MTB23P06VT4 ON Semiconductor, MTB23P06VT4 Datasheet

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MTB23P06VT4

Manufacturer Part Number
MTB23P06VT4
Description
MOSFET P-CH 60V 23A D2PAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of MTB23P06VT4

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 11.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1620pF @ 25V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MTB23P06VT4OS
P–Channel D 2 PAK
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
1. When surface mounted to an FR4 board using the minimum recommended
November, 2000 – Rev.2
MAXIMUM RATINGS
Drain–to–Source Voltage
Drain–to–Gate Voltage (R GS = 1.0 M )
Gate–to–Source Voltage
Drain Current – Continuous @ 25 C
Drain Current
Drain Current
Total Power Dissipation @ 25 C
Operating and Storage Temperature
Single Pulse Drain–to–Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
This Power MOSFET is designed to withstand high energy in the
Avalanche Energy Specified
I DSS and V DS(on) Specified at Elevated Temperature
Semiconductor Components Industries, LLC, 2000
pad size.
– Continuous
– Non–repetitive (t p
Total Power Dissipation @ T A = 25 C
(Note 1.)
Range
Energy – Starting T J = 25 C
(V DD = 25 Vdc, V GS = 10 Vdc, Peak
I L = 23 Apk, L = 3.0 mH, R G = 25 )
– Junction to Case
– Junction to Ambient
– Junction to Ambient (Note 1.)
Purposes, 1/8 from Case for 10
seconds
Derate above 25 C
– Continuous @ 100 C
– Single Pulse (t p
Rating
(T C = 25 C unless otherwise noted)
10 ms)
Preferred Device
10 s)
Symbol
T J , T stg
V GSM
V DGR
V DSS
R JC
R JA
R JA
V GS
E AS
I DM
P D
T L
I D
I D
–55 to
Value
0.60
1.67
62.5
175
794
260
3.0
60
60
23
15
81
90
50
15
25
1
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
C/W
mJ
C
C
Preferred devices are recommended choices for future use
and best overall value.
MTB23P06V
MTB23P06VT4
Device
1
MTB23P06V
Y
WW
ORDERING INFORMATION
R DS(on) = 120 m
3
2
MARKING DIAGRAM
& PIN ASSIGNMENT
Gate
http://onsemi.com
23 AMPERES
60 VOLTS
1
MTB23P06V
YWW
P–Channel
Package
D 2 PAK
D 2 PAK
4
Drain
Drain
4
2
Publication Order Number:
= Device Code
= Year
= Work Week
CASE 418B
3
Source
STYLE 2
800/Tape & Reel
D 2 PAK
50 Units/Rail
MTB23P06V/D
Shipping

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MTB23P06VT4 Summary of contents

Page 1

... C 175 E AS 794 260 C Device MTB23P06V MTB23P06VT4 Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 23 AMPERES 60 VOLTS R DS(on) = 120 m P–Channel PAK CASE 418B 2 1 STYLE 2 3 MARKING DIAGRAM & PIN ASSIGNMENT ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS C Figure 1. On–Region Characteristics Figure 3. On–Resistance versus Drain Current and Temperature Figure 5. On–Resistance Variation with Temperature MTB23P06V Figure 2. Transfer Characteristics C Figure 4. On–Resistance versus Drain Current and Gate Voltage ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are determined by how fast the FET input capacitance can be charged by current from ...

Page 5

Figure 8. Gate–To–Source and Drain–To–Source Voltage versus Total Charge DRAIN–TO–SOURCE DIODE CHARACTERISTICS The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is forward biased. Curves ...

Page 6

Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 14. Diode Reverse Recovery Waveform MTB23P06V SAFE OPERATING AREA Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature Figure 13. Thermal Response Figure 15 PAK Power Derating Curve ...

Page 7

INFORMATION FOR USING THE D 2 PAK SURFACE MOUNT PACKAGE RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ...

Page 8

Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Cladt. Using a board material such as Thermal Clad, an aluminum core Prior to placing surface mount components onto a printed circuit board, ...

Page 9

For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings ...

Page 10

PACKAGE DIMENSIONS –B– S –T– MTB23P06V D 2 PAK CASE 418B–03 ISSUE http://onsemi.com 10 ...

Page 11

Notes MTB23P06V http://onsemi.com 11 ...

Page 12

... Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001– ...

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