MTB23P06VT4 ON Semiconductor, MTB23P06VT4 Datasheet - Page 3

• Manufacturer Part Number: MTB23P06VT4
• Description: MOSFET P-CH 60V 23A D2PAK
• Manufacturer: ON Semiconductor

Specifications of MTB23P06VT4

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1620pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTB23P06VT4OS

MTB23P06V
TYPICAL ELECTRICAL CHARACTERISTICS
C
C
C
100 C
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
C
C
C
C
Figure 3. On–Resistance versus Drain Current
Figure 4. On–Resistance versus Drain Current
and Temperature
and Gate Voltage
Figure 5. On–Resistance Variation with
Figure 6. Drain–To–Source Leakage
Temperature
Current versus Voltage
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