MTB23P06VT4 ON Semiconductor, MTB23P06VT4 Datasheet - Page 6

• Manufacturer Part Number: MTB23P06VT4
• Description: MOSFET P-CH 60V 23A D2PAK
• Manufacturer: ON Semiconductor

Specifications of MTB23P06VT4

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1620pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTB23P06VT4OS

MTB23P06V
SAFE OPERATING AREA
Figure 11. Maximum Rated Forward Biased
Figure 12. Maximum Avalanche Energy versus
Safe Operating Area
Starting Junction Temperature
Figure 13. Thermal Response
R JA = 50 C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size
450 mils x 350 mils
Figure 15. D 2 PAK Power Derating Curve
Figure 14. Diode Reverse Recovery Waveform
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