MTB23P06VT4 ON Semiconductor, MTB23P06VT4 Datasheet - Page 5

• Manufacturer Part Number: MTB23P06VT4
• Description: MOSFET P-CH 60V 23A D2PAK
• Manufacturer: ON Semiconductor

Specifications of MTB23P06VT4

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1620pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTB23P06VT4OS

the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T C ) of 25 C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed
Resistance–General Data and Its Use.”
traverse any load line provided neither rated peak current
(I DM ) nor rated voltage (V DSS ) is exceeded and the
transition time (t r ,t f ) do not exceed 10 s. In addition the total
power averaged over a complete switching cycle must not
exceed (T J(MAX) – T C )/(R JC ).
in switching circuits with unclamped inductive loads. For
The Forward Biased Safe Operating Area curves define
Switching between the off–state and the on–state may
A Power MOSFET designated E–FET can be safely used
Figure 8. Gate–To–Source and Drain–To–Source
in
Voltage versus Total Charge
AN569,
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
“Transient
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
Thermal
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MTB23P06V
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reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction
temperature.
drain–to–source avalanche at currents up to rated pulsed
current (I DM ), the energy rating is specified at rated
continuous current (I D ), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous I D can safely be
assumed to equal the values indicated.
Although many E–FETs can withstand the stress of
Figure 9. Resistive Switching Time
Variation versus Gate Resistance