SPD25N06S2-40 Infineon Technologies, SPD25N06S2-40 Datasheet

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SPD25N06S2-40

Manufacturer Part Number
SPD25N06S2-40
Description
MOSFET N-CH 55V 29A DPAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of SPD25N06S2-40

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
29A
Vgs(th) (max) @ Id
4V @ 26µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
710pF @ 25V
Power - Max
68W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000013572
SPD25N06S240T
OptiMOS
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
Type
SPD25N06S2-40
Maximum Ratings, at T
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche energy, single pulse
I D =25A, V
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
I S =25A, V
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
C
C
C
=25°C
=25°C
=25°C
DD
DS
=44V, di/dt=200A/µs, T
=25V, R
® Power-Transistor
GS
=25Ω
Package
P- TO252 -3-11 Q67060-S7427
j
= 25 °C, unless otherwise specified
jmax
=175°C
Ordering Code
jmax
Page 1
1)
Symbol
I
I
E
E
dv/dt
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
stg
Marking
2N0640
-55... +175
55/175/56
Product Summary
V
R
I
D
Value
DS
DS(on)
±20
116
6.8
29
20
80
68
SPD25N06S2-40
6
P- TO252 -3-11
2003-05-09
55
40
29
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A

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SPD25N06S2-40 Summary of contents

Page 1

... C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Ordering Code Symbol puls jmax dv/dt =175°C jmax tot stg Page 1 SPD25N06S2-40 Product Summary DS(on TO252 -3-11 Marking 2N0640 Value 29 20 116 80 6.8 6 ±20 68 -55... +175 55/175/56 2003-05-09 V mΩ ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) Page 2 SPD25N06S2-40 Values Unit min. typ. max. - 1.45 2.2 K 100 - - Values Unit min. typ. max. 55 ...

Page 3

... DS C f=1MHz oss C rss t V =30V, V =10V, d(on =25A =22Ω d(off =44V, I =25A =44V, I =25A 10V GS V (plateau) V =44V, I =25A =25° =0V, I =25A =30V /dt=100A/µ Page 3 SPD25N06S2-40 Values Unit min. typ. max. 8 534 710 pF - 138 180 - 8 5 116 - 0.9 1 2003-05-09 ...

Page 4

... Safe operating area parameter : °C C SPD25N06S2- Drain current parameter: V SPD25N06S2- °C 190 Max. transient thermal impedance thJC parameter : K 7.5µ µ 100 µ Page 4 SPD25N06S2-40 ) ≥ 100 120 140 160 ) SPD25N06S2- 0.50 single pulse - 2003-05-09 °C 190 T C 0.20 0.10 0.05 0.02 0. ...

Page 5

... Typ. transfer characteristics ≥ parameter µ Typ. drain-source on resistance R DS(on) parameter: V 120 Vgs = 7.5V mΩ 100 Vgs = 7V 90 Vgs = 6. Vgs = 6V 60 Vgs = 5. Vgs = 5V 30 Vgs = 4. 3 Typ. forward transconductance g = f(I DS(on)max fs parameter Page 5 SPD25N06S2- =25° 2003-05-09 Vgs=5V Vgs=5.5V Vgs=6V Vgs=6.5V Vgs=7V Vgs=7.5V Vgs=10V ...

Page 6

... Typ. gate threshold voltage GS(th) parameter 2.5 2 1.5 °C 100 180 - Forward character. of reverse diode parameter iss C oss rss Page 6 SPD25N06S2- 130 µA 26 µA - 100 ) µs p SPD25N06S2- °C typ 175 °C typ °C (98 175 °C (98%) j 0.4 0.8 1.2 1.6 2 2.4 2003-05-09 °C 180 ...

Page 7

... Typ. avalanche energy par =25A 105 15 Drain-source breakdown voltage (BR)DSS j parameter SPD25N06S2- -60 - Typ. gate charge Ω parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPD25N06S2-40 ) Gate = 29 A pulsed D SPD25N06S2-40 0 max 0 2003-05-09 DS max Gate ...

Page 8

... If they fail reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPD25N06S2-40, for simplicity the device is referred to by the term SPD25N06S2-40 throughout this documentation. Page 8 ...

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