SPD25N06S2-40 Infineon Technologies, SPD25N06S2-40 Datasheet - Page 4

• Manufacturer Part Number: SPD25N06S2-40
• Description: MOSFET N-CH 55V 29A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPD25N06S2-40

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 26µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013572; SPD25N06S240T

1 Power dissipation
P
parameter: V
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
= f (T
10
10
10
10
W
A
75
60
55
50
45
40
35
30
25
20
15
10
5
0
3
2
1
0
10
0
SPD25N06S2-40
SPD25N06S2-40
DS
-1
C
20
)
)
GS
40
≥ 6 V
60
10
0
C
80
= 25 °C
100 120 140 160
10
1
V
T
V
t
p
°C
C
= 7.5µs
DS
10 µs
100 µs
1 ms
190
10
Page 4
2
2 Drain current
I
parameter: V
4 Max. transient thermal impedance
Z
parameter : D = t
D
thJC
= f (T
K/W
10
10
10
10
10
10
A
32
24
20
16
12
8
4
0
= f (t
-1
-2
-3
-4
0
1
0
10
C
SPD25N06S2-40
SPD25N06S2-40
)
-7
20
p
)
10
single pulse
GS
40
-6
≥ 10 V
10
p
60
/T
-5
80
10
SPD25N06S2-40
-4
100 120 140 160
10
-3
10
2003-05-09
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
t
s
°C
p
C
190
10
0