SPD25N06S2-40 Infineon Technologies, SPD25N06S2-40 Datasheet - Page 5

• Manufacturer Part Number: SPD25N06S2-40
• Description: MOSFET N-CH 55V 29A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPD25N06S2-40

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 26µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013572; SPD25N06S240T

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
A
A
60
50
45
40
35
30
25
20
15
10
50
40
35
30
25
20
15
10
5
0
5
0
0
0
DS
GS
0.5
); T
); V
1
p
p
Vgs = 10V
= 80 µs
= 80 µs
1
j
=25°C
DS
2
1.5
≥ 2 x I
3
2
D
2.5
4
x R
3
DS(on)max
5
3.5
Vgs = 7.5V
Vgs = 6.5V
Vgs = 6V
Vgs = 5.5V
Vgs = 4.5V
Vgs = 7V
Vgs = 5V
6
4
V
V
V
V
DS
GS
8
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
mΩ
= f(I
120
100
S
90
80
70
60
50
40
30
20
20
16
14
12
10
8
6
4
2
0
0
0
D
= f (I
); T
4
j
=25°C
10
D
fs
GS
)
8
20
12
SPD25N06S2-40
16
30
20
40
2003-05-09
24
Vgs=5V
Vgs=5.5V
Vgs=6V
Vgs=6.5V
Vgs=7V
Vgs=7.5V
Vgs=10V
A
A
I
I
D
D
32
60