SPD25N06S2-40 Infineon Technologies, SPD25N06S2-40 Datasheet - Page 2

• Manufacturer Part Number: SPD25N06S2-40
• Description: MOSFET N-CH 55V 29A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPD25N06S2-40

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 26µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013572; SPD25N06S240T

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
1 Defined by design. Not subject to production test.
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
=26µA
=0V, I
=55V, V
=55V, V
=20V, V
=10V, I
2
cooling area
D
D
=1mA
GS
GS
DS
=13A
=0V, T
=0V, T
=0V
j
j
2)
=25°C
=125°C
GS
= V
DS
j
= 25 °C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
thJC
thJA
thJA
min.
min.
2.1
55
-
-
-
-
-
-
-
-
Values
Values
0.01
1.45
typ.
typ.
30
SPD25N06S2-40
3
1
1
-
-
-
-
max.
max.
100
100
100
2.2
40
75
50
2003-05-09
4
1
-
Unit
V
µA
nA
mΩ
Unit
K/W