BUZ30A H3045A Infineon Technologies, BUZ30A H3045A Datasheet - Page 10

• Manufacturer Part Number: BUZ30A H3045A
• Description: MOSFET N-CH 200V 21A TO-263
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ30A H3045A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BUZ30A L3045A; BUZ30A L3045A; BUZ30AH3045AINTR; BUZ30AL3045AINTR; BUZ30AL3045AINTR; BUZ30AL3045AXT; SP000102176; SP000736082

BUZ 30A H
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81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
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contact the nearest Infineon Technologies Office
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
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Page 10
2010-07-02
Rev. 2.5