BUZ30A H3045A Infineon Technologies, BUZ30A H3045A Datasheet - Page 6

• Manufacturer Part Number: BUZ30A H3045A
• Description: MOSFET N-CH 200V 21A TO-263
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ30A H3045A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BUZ30A L3045A; BUZ30A L3045A; BUZ30AH3045AINTR; BUZ30AL3045AINTR; BUZ30AL3045AINTR; BUZ30AL3045AXT; SP000102176; SP000736082

Typ. transfer characteristics
parameter: t
Typ. output characteristics
I
parameter: t
V
Rev. 2.5
D
I
D
I
DS
D
= ƒ( V
≥
2 x I
45
35
30
25
20
15
10
50
40
35
30
25
20
15
10
A
A
5
0
5
0
DS
0
0
D
)
P
tot
p
x R
1
p
= 80 µs
= 125W
= 80 µs
DS(on)max
2
2
3
l
4
4
k
j
I
i
D
5
h
= f ( V
6
g
6
GS
7
8
)
f
8
e
c
a
V
V
d
b
V
V GS [V]
GS
DS
V
a 4.0
b 4.5
c 5.0
d 5.5
e 6.0
f
g 7.0
h 7.5
i
j
k 10.0
l 20.0
6.5
8.0
9.0
10
11
Page 6
Typ. forward transconductance
parameter: t
V
R
Typ. drain-source on-resistance
R
parameter: V
g
DS
fs
DS (on)
DS (on)
≥
2 x I
0.40
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
20
14
16
12
10
S
8
6
Ω
4
2
0
0
0
D
= ƒ( I
V
GS
4.0
a
x R
a
p
4
5
[V] =
= 80 µs,
D
GS
4.5
b
DS(on)max
)
8
10
5.0
c
b
12
5.5
d
15
16
6.0
e
c
6.5
20
f
20
g
7.0
g
fs
24
25
d
= f
7.5
h
28
( I
30
8.0
D
i
BUZ 30A H
)
32
9.0
2010-07-02
j
l
I
I
D
e
A
D
10.0
A
k
h
j
f
k
i
g
20.0
40
40
l