IPD25CNE8N G Infineon Technologies, IPD25CNE8N G Datasheet - Page 3

• Manufacturer Part Number: IPD25CNE8N G
• Description: MOSFET N-CH 85V 35A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD25CNE8N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 39µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 2070pF @ 40V
• Power - Max: 71W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000096457

Rev. 1.07
5)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
See figure 16 for gate charge parameter definition
5)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
V
Q
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
gd
sw
g
oss
rr
V
f =1 MHz
V
I
V
V
V
T
V
T
V
di
D
page 3
C
j
GS
DD
DD
GS
DD
GS
R
=35 A, R
=25 °C
F
=25 °C
=50 V, I
/dt =100 A/µs
=0 V, V
=40 V, V
=40 V, I
=0 to 10 V
=40 V, V
=0 V, I
IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
F
F
G
DS
=35 A,
=I
D
=1.6 Ω
GS
GS
=35 A,
=40 V,
S
=10 V,
=0 V
,
IPB26CNE8N G IPD25CNE8N G
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1560
typ.
288
165
5.6
23
10
13
10
23
22
85
4
3
9
5
1
-
-
max.
2070
383
140
1.2
35
16
19
12
14
31
29
35
6
4
8
-
-
Unit
pF
ns
nC
V
nC
A
V
ns
nC
2010-04-28