IPD25CNE8N G Infineon Technologies, IPD25CNE8N G Datasheet - Page 5

• Manufacturer Part Number: IPD25CNE8N G
• Description: MOSFET N-CH 85V 35A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD25CNE8N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 39µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 2070pF @ 40V
• Power - Max: 71W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000096457

Rev. 1.07
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
100
80
60
40
20
DS
GS
80
60
40
20
0
0
); T
0
); |V
0
j
=25 °C
j
GS
DS
|>2|I
1
2
D
|R
10 V
DS(on)max
2
V
V
8 V
GS
DS
4
[V]
[V]
175 °C
3
6 V
5 V
4.5 V
5.5 V
7 V
6.5 V
25 °C
6
4
page 5
5
8
IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
60
50
40
30
20
10
0
40
35
30
25
20
15
10
D
=f(I
5
0
0
); T
0
D
j
); T
=25 °C
GS
10
5 V
j
=25 °C
IPB26CNE8N G IPD25CNE8N G
20
5.5 V
10
30
I
I
D
D
[A]
[A]
40
6 V
20
50
8 V
60
10 V
6.5 V
7 V
2010-04-28
70
30