IPD25CNE8N G Infineon Technologies, IPD25CNE8N G Datasheet - Page 7

• Manufacturer Part Number: IPD25CNE8N G
• Description: MOSFET N-CH 85V 35A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD25CNE8N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 39µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 2070pF @ 40V
• Power - Max: 71W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000096457

Rev. 1.07
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
100
10
95
90
85
80
75
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
=25 Ω
-20
D
=1 mA
10
20
150 °C
t
T
AV
j
60
[°C]
[µs]
100 °C
100
100
25 °C
140
1000
180
page 7
IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=35 A pulsed
g s
IPB26CNE8N G IPD25CNE8N G
5
10
Q
Q
6
gate
g
Q
sw
[nC]
Q
15
g d
20 V
20
Q
60 V
40 V
g ate
2010-04-28
25