IPD25CNE8N G Infineon Technologies, IPD25CNE8N G Datasheet - Page 4

• Manufacturer Part Number: IPD25CNE8N G
• Description: MOSFET N-CH 85V 35A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD25CNE8N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 39µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 2070pF @ 40V
• Power - Max: 71W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000096457

Rev. 1.07
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
10
80
70
60
50
40
30
20
10
DS
0
-1
2
1
0
C
10
0
); T
)
-1
C
p
=25 °C; D =0
50
10
0
T
V
C
DS
100
10
[°C]
DC
1
[V]
100 µs
1 ms
10 µs
10 ms
150
10
2
1 µs
200
10
page 4
3
IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
=f(t
0.1
40
35
30
25
20
15
10
10
C
5
0
1
); V
p
0
)
0.01
single pulse
0.05
0.02
0.5
0.2
0.1
GS
≥10 V
p
IPB26CNE8N G IPD25CNE8N G
/T
50
T
t
C
p
100
[°C]
[s]
150
2010-04-28
200