BLF147,112 NXP Semiconductors, BLF147,112 Datasheet - Page 11

• Manufacturer Part Number: BLF147,112
• Description: TRANSISTOR RF DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF147,112

• Package / Case: SOT-121B
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 25A
• Voltage - Test: 28V
• Power - Output: 150W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 150W
• Power Gain (typ)@vds: 19@28VdB
• Frequency (max): 108MHz
• Package Type: CRFM
• Pin Count: 4
• Forward Transconductance (typ): 7.5S
• Drain Source Resistance (max): 150@10Vmohm
• Input Capacitance (typ)@vds: 450@28VpF
• Output Capacitance (typ)@vds: 360@28VpF
• Reverse Capacitance (typ): 55@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 40%
• Mounting: Screw
• Mode Of Operation: SSB Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 220000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2385; 933930000112; BLF147; BLF147

NXP Semiconductors
handbook, halfpage
VHF power MOS transistor
Class-B operation; V
R
Fig.18 Power gain as a function of frequency;
GS
(dB)
G p
30
20
10
= 15 ; P
0
0
typical values.
L
= 150 W.
50
DS
= 28 V; I
DQ
100
= 0.2 A;
150
f (MHz)
MGP060
200
Rev. 06 - 5 December 2006
Product specification
BLF147
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