BLF147,112 NXP Semiconductors, BLF147,112 Datasheet - Page 15
BLF147,112
Manufacturer Part Number
BLF147,112
Description
TRANSISTOR RF DMOS SOT121B
Manufacturer
NXP Semiconductors
Datasheet
1.BLF147112.pdf
(15 pages)
Specifications of BLF147,112
Package / Case
SOT-121B
Transistor Type
N-Channel
Frequency
108MHz
Gain
14dB
Voltage - Rated
65V
Current Rating
25A
Voltage - Test
28V
Power - Output
150W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.15 Ohm @ 10 V
Transistor Polarity
N-Channel
Configuration
Single Dual Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
25 A
Power Dissipation
220000 mW
Maximum Operating Temperature
+ 200 C
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
150W
Power Gain (typ)@vds
19@28VdB
Frequency (max)
108MHz
Package Type
CRFM
Pin Count
4
Forward Transconductance (typ)
7.5S
Drain Source Resistance (max)
150@10Vmohm
Input Capacitance (typ)@vds
450@28VpF
Output Capacitance (typ)@vds
360@28VpF
Reverse Capacitance (typ)
55@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
40%
Mounting
Screw
Mode Of Operation
SSB Class-AB
Number Of Elements
1
Power Dissipation (max)
220000mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Current - Test
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-2385
933930000112
BLF147
BLF147
933930000112
BLF147
BLF147
NXP Semiconductors
Revision history
Revision history
Document ID
BLF147_6
Modifications:
BLF147_5
BLF147_4
(9397 750 11593)
BLF147_3
(9397 750 08411)
BLF147_CNV_2
(9397 750 xxxxx)
Release date
20061205
20061108
20030901
20010523
19971215
•
Correction made to
Data sheet status
Product data sheet
Product data sheet
Product specification
Product specification
Product specification
Rev. 06 - 5 December 2006
page 9 “List of components”
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2006.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Change notice
-
-
-
-
-
VHF power MOS transistor
Supersedes
BLF147_5
BLF147_4
BLF147_3
BLF147_CNV_2
-
Date of release: 5 December 2006
Document identifier: BLF147_6
BLF147
All rights reserved.
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