BLF147,112 NXP Semiconductors, BLF147,112 Datasheet - Page 4

• Manufacturer Part Number: BLF147,112
• Description: TRANSISTOR RF DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF147,112

• Package / Case: SOT-121B
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 25A
• Voltage - Test: 28V
• Power - Output: 150W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 150W
• Power Gain (typ)@vds: 19@28VdB
• Frequency (max): 108MHz
• Package Type: CRFM
• Pin Count: 4
• Forward Transconductance (typ): 7.5S
• Drain Source Resistance (max): 150@10Vmohm
• Input Capacitance (typ)@vds: 450@28VpF
• Output Capacitance (typ)@vds: 360@28VpF
• Reverse Capacitance (typ): 55@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 40%
• Mounting: Screw
• Mode Of Operation: SSB Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 220000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2385; 933930000112; BLF147; BLF147

NXP Semiconductors
CHARACTERISTICS
T
V
V
I
I
V
g
R
I
C
C
C
j
DSS
GSS
DSX
GS
fs
V
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
VHF power MOS transistor
GS
SYMBOL
group indicator
GROUP
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched pairs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
PARAMETER
LIMITS
(V)
MAX.
Rev. 06 - 5 December 2006
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
I
V
V
I
I
I
I
V
V
V
V
D
D
D
D
D
GS
GS
GS
GS
GS
GS
= 100 mA; V
= 200 mA; V
= 100 mA; V
= 8 A; V
= 8 A; V
= 0; V
= 20 V; V
= 10 V; V
= 0; V
= 0; V
= 0; V
CONDITIONS
GROUP
DS
DS
GS
DS
DS
DS
W
= 28 V
= 10 V
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
O
Q
R
U
= 10 V
P
S
T
V
X
Y
Z
DS
GS
DS
DS
DS
= 10 V
= 10 V
= 10 V
= 0
= 0
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
65
2
5
MIN.
LIMITS
7.5
0.1
37
450
360
55
TYP. MAX.
(V)
Product specification
5
1
4.5
100
0.15
BLF147
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4 of 15
V
mA
V
mV
S
A
pF
pF
pF
UNIT
A