BLF147,112 NXP Semiconductors, BLF147,112 Datasheet - Page 2

• Manufacturer Part Number: BLF147,112
• Description: TRANSISTOR RF DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF147,112

• Package / Case: SOT-121B
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 25A
• Voltage - Test: 28V
• Power - Output: 150W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 150W
• Power Gain (typ)@vds: 19@28VdB
• Frequency (max): 108MHz
• Package Type: CRFM
• Pin Count: 4
• Forward Transconductance (typ): 7.5S
• Drain Source Resistance (max): 150@10Vmohm
• Input Capacitance (typ)@vds: 450@28VpF
• Output Capacitance (typ)@vds: 360@28VpF
• Reverse Capacitance (typ): 55@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 40%
• Mounting: Screw
• Mode Of Operation: SSB Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 220000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2385; 933930000112; BLF147; BLF147

NXP Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121B flange
package with a ceramic cap. All leads are isolated from the
flange. A marking code, showing gate-source voltage
(V
applications. Refer to the “General” section of the
handbook for further information.
QUICK REFERENCE DATA
RF performance at T
SSB, class-AB
CW, class-B
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
High power gain
Low intermodulation distortion
Easy power control
Good thermal stability
Withstands full load mismatch.
Industrial and military applications in the HF/VHF
frequency range.
GS
VHF power MOS transistor
) information is provided for matched pair
OPERATION
MODE OF
h
= 25 C in a common source test circuit.
CAUTION
(MHz)
108
28
f
V
(V)
28
28
DS
Rev. 06 - 5 December 2006
150 (PEP)
WARNING
(W)
150
P
L
PINNING - SOT121B
handbook, halfpage
2
1
typ. 14
PIN
1
2
3
4
(dB)
G
17
Fig.1 Simplified outline and symbol.
p
drain
source
gate
source
typ. 70
(%)
35
D
DESCRIPTION
4
3
Product specification
(dB)
d
30
3
g
MAM267
BLF147
2 of 15
(dB)
d
30
5
d
s