BF1211WR,115 NXP Semiconductors, BF1211WR,115 Datasheet - Page 2
![MOSFET N-CH DUAL GATE 6V SOT343R](/photos/5/63/56355/568-cmpak-4_sot343r_sml.jpg)
BF1211WR,115
Manufacturer Part Number
BF1211WR,115
Description
MOSFET N-CH DUAL GATE 6V SOT343R
Manufacturer
NXP Semiconductors
Datasheet
1.BF1211215.pdf
(16 pages)
Specifications of BF1211WR,115
Package / Case
CMPAK-4
Transistor Type
N-Channel Dual Gate
Frequency
400MHz
Gain
29dB
Voltage - Rated
6V
Current Rating
30mA
Noise Figure
0.9dB
Current - Test
15mA
Voltage - Test
5V
Configuration
Single Dual Gate
Continuous Drain Current
0.03 A
Drain-source Breakdown Voltage
6 V
Gate-source Breakdown Voltage
6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
180 mW
Transistor Polarity
N-Channel
Application
VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
6V
Power Gain (typ)@vds
34@5VdB
Noise Figure (max)
2dB
Package Type
CMPAK
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.1@5V@Gate 1/1.1@5V@Gate 2pF
Output Capacitance (typ)@vds
0.9@5VpF
Reverse Capacitance (typ)
0.015@5VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
180mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1961-2
934057513115
BF1211WR
934057513115
BF1211WR
NXP Semiconductors
FEATURES
Short channel transistor with high forward transfer
Low noise gain controlled amplifier
Excellent low frequency noise performance
Partly internal self-biasing circuit to ensure good
APPLICATIONS
Gain controlled low noise VHF and UHF amplifiers for
DESCRIPTION
Enhancement type N-channel field-effect transistor with
source and substrate interconnected. Integrated diodes
between gates and source protect against excessive input
voltage surges. The BF1211, BF1211R and BF1211WR
are encapsulated in the SOT143B, SOT143R and
SOT343R plastic packages respectively.
QUICK REFERENCE DATA
2003 Dec 16
V
I
P
y
C
C
F
X
T
SYMBOL
D
admittance to input capacitance ratio
cross-modulation performance during AGC and good
DC stabilization.
5 V digital and analog television tuner applications.
j
DS
tot
mod
N-channel dual-gate MOS-FETs
ig1-ss
rss
fs
Fig.2
BF1211R marking code: LHp
handbook, 2 columns
Simplified outline (SOT143R).
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
junction temperature
3
2
Top view
PARAMETER
MSB035
4
1
f = 400 MHz
input level for k = 1% at
f = 1 MHz
40 dB AGC
CONDITIONS
2
PINNING
handbook, halfpage
Fig.1
Fig.3
BF1211WR marking code: MK
BF1211 marking code: LFp
handbook, 2 columns
Simplified outline (SOT143B).
Simplified outline (SOT343R).
PIN
1
2
3
4
25
100
Top view
1
4
MIN.
3
2
Top view
BF1211; BF1211R;
30
2.1
15
0.9
105
source
drain
gate 2
gate 1
TYP.
MSB842
MSB014
4
1
Product specification
DESCRIPTION
3
2
BF1211WR
6
30
180
40
2.6
30
1.6
150
MAX.
V
mA
mW
mS
pF
fF
dB
dBV
C
UNIT