BF1211WR,115 NXP Semiconductors, BF1211WR,115 Datasheet - Page 9

• Manufacturer Part Number: BF1211WR,115
• Description: MOSFET N-CH DUAL GATE 6V SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BF1211WR,115

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 29dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 15mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 34@5VdB
• Noise Figure (max): 2dB
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.1@5V@Gate 1/1.1@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.9@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 180mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1961-2; 934057513115; BF1211WR

NXP Semiconductors
2003 Dec 16
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
I
Fig.17 Input admittance as a function of frequency;
V
I
Fig.19 Forward transfer admittance and phase as
D
D
DS
DS
(mS)
(mS)
|y fs |
= 15 mA; T
= 15 mA; T
y is
10
10
10
= 5 V; V
= 5 V; V
10
10
−1
1
1
2
2
10
10
typical values.
functions of frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
b is
|y fs |
g is
ϕ fs
f (MHz)
f (MHz)
MDB841
MDB843
10
10
3
3
−10
−10
−1
(deg)
ϕ fs
2
9
handbook, halfpage
handbook, halfpage
V
I
Fig.18 Reverse transfer admittance and phase as
Fig.20 Output admittance as a function of
V
I
D
D
DS
(mS)
DS
(μS)
|y rs |
y os
= 15 mA; T
= 15 mA; T
10
10
10
10
= 5 V; V
= 5 V; V
10
10
−1
−2
BF1211; BF1211R; BF1211WR
1
1
3
2
10
10
a function of frequency; typical values.
frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
b os
g os
ϕ rs
|y rs |
f (MHz)
f (MHz)
Product specification
MDB842
MDB844
10
10
3
3
−10
−10
−10
−1
(deg)
ϕ rs
3
2