PD57018S-E STMicroelectronics, PD57018S-E Datasheet - Page 21
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PD57018S-E
Manufacturer Part Number
PD57018S-E
Description
TRANS RF N-CH FET LDMOST PWRSO10
Manufacturer
STMicroelectronics
Datasheet
1.PD57018-E.pdf
(25 pages)
Specifications of PD57018S-E
Transistor Type
LDMOS
Frequency
945MHz
Gain
16.5dB
Voltage - Rated
65V
Current Rating
2.5A
Current - Test
100mA
Voltage - Test
28V
Power - Output
18W
Package / Case
PowerSO-10 Exposed Bottom Pad
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.76 Ohms
Forward Transconductance Gfs (max / Min)
1 S
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.5 A
Power Dissipation
31.7 W
Maximum Operating Temperature
+ 165 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Details
Other names
497-5306-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD57018S-E
Manufacturer:
ST
Quantity:
20 000
PD57018-E
Note:
Table 16.
Resin protrusions not included (max value: 0.15 mm per side)
Figure 27. Package dimensions
Dim.
A1
A2
A3
A4
D1
E1
E2
E3
R1
R2
T1
T2
G
D
E
a
b
F
c
PowerSO-10RF straight lead mechanical data
15.15
1.62
0.15
0.23
Min
3.4
1.2
5.4
9.4
7.4
9.3
7.3
5.9
10 deg
6 deg
Doc ID 12214 Rev 5
mm.
1.67
5.53
0.27
15.4
Typ
3.5
1.3
0.2
0.2
9.5
7.5
9.4
7.4
6.1
0.5
1.2
0.8
15.65
Max
1.72
0.25
5.65
0.32
0.25
3.6
1.4
9.6
7.6
9.5
7.5
6.3
CRITICAL DIMENSIONS:
- Overall width (L)
0.134
0.212
0.370
0.290
0.595
0.286
0.064
0.046
0.005
0.008
0.365
0.231
Min
Package mechanical data
10 deg
0.065
0.137
0.007
0.007
0.217
0.374
0.295
0.606
0.292
0.019
0.047
0.031
6 deg
Inch
0.05
0.01
0.37
0.24
Typ
0.068
0.142
0.054
0.009
0.221
0.012
0.377
0.298
0.615
0.375
0.294
0.247
Max
0.01
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