PD57018S-E STMicroelectronics, PD57018S-E Datasheet - Page 5

• Manufacturer Part Number: PD57018S-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD57018S-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current Rating: 2.5A
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 18W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.76 Ohms
• Forward Transconductance Gfs (max / Min): 1 S
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 31.7 W
• Maximum Operating Temperature: + 165 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-5306-5

PD57018-E
3
Impedance
Figure 2.
Table 7.
Freq. (MHz)
925
945
960
Current conventions
Impedance data
PD57018-E
.52 - j 1.75
.49 - j 2.38
.48 - j 2.36
Z
IN
(Ω)
Doc ID 12214 Rev 5
3.04 + j .10
3.14 + j .76
3.12 + j .27
Z
DL
(Ω)
Freq. (MHz)
925
945
960
PD57018S-E
.35 - j .53
.53 - j .86
.50 - j .52
Z
IN
(Ω)
1.92 + j 4.13
2.03 + j 2.81
2.04 + j 2.57
Impedance
Z
DL
(Ω)
5/25