PD57018S-E STMicroelectronics, PD57018S-E Datasheet - Page 6

• Manufacturer Part Number: PD57018S-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD57018S-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current Rating: 2.5A
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 18W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.76 Ohms
• Forward Transconductance Gfs (max / Min): 1 S
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 31.7 W
• Maximum Operating Temperature: + 165 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-5306-5

Typical performance
4
4.1
6/25
Figure 3.
Figure 5.
Figure 7.
20
18
16
14
10
12
8
6
4
2
0
0
0.05
Typical performance
PD57018-E
Capacitance vs drain voltage
Gate-source voltage vs case
temperature
Output power vs input power
0.1
0.15
Pin, INPUT POWER (W)
0.2
925 MHz
0.25
960 MHz
0.3
0.35
I
945 MHz
DQ
V
DD
= 100 mA
0.4
Doc ID 12214 Rev 5
= 28 V
0.45
Figure 4.
Figure 6.
Figure 8.
17.5
16.5
15.5
14.5
0.1
10
18
17
16
15
14
1
1
0
2
Drain current vs gate voltage
Safe operating area
Power gain vs output power
4
925 MHz
VDS, DRAIN-SOURCE VOLTAGE (V)
6
Pout, OUTPUT POWER (W)
8
945 MHz
Tc = 70 ºC
10
10
12
Tc = 100 ºC
960 MHz
14
Tc = 25 ºC
Idq = 100 mA
16
Vdd = 28 V
PD57018-E
18
20
100