PD57018S-E STMicroelectronics, PD57018S-E Datasheet - Page 9

• Manufacturer Part Number: PD57018S-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD57018S-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current Rating: 2.5A
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 18W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.76 Ohms
• Forward Transconductance Gfs (max / Min): 1 S
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 31.7 W
• Maximum Operating Temperature: + 165 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-5306-5

PD57018-E
Figure 21. Output power vs drain voltage
25
20
15
10
5
0
15
20
925 MHz
945 MHz
25
960 MHz
30
Idq = 100 mA
Pin = .3 W
Doc ID 12214 Rev 5
35
Figure 22. Output power vs gate voltage
25
20
15
10
5
0
0
0.5
1
VGS, GATE BIAS VOLTAGE (V)
1.5
Typical performance
2
945 MHz
2.5
925 MHz
V
Pin = .3 W
3
DD
960 MHz
= 28 V
3.5
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