PD57018S-E STMicroelectronics, PD57018S-E Datasheet - Page 7

• Manufacturer Part Number: PD57018S-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD57018S-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current Rating: 2.5A
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 18W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.76 Ohms
• Forward Transconductance Gfs (max / Min): 1 S
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 31.7 W
• Maximum Operating Temperature: + 165 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-5306-5

PD57018-E
Figure 9.
Figure 11. Output power vs
Figure 13. Output power vs
70
60
50
40
30
20
10
22
20
19
18
17
16
21
0
25
20
15
10
5
0
0
0
15
2
50
Drain efficiency vs
output power
bias current
drain voltage
4
100
20
VDS, DRAIN-SOURCE VOLTAGE (V)
925 MHz
6
Pout, OUTPUT POWER (W)
Idq, BIAS CURRENT (mA)
150
8
945 MHz
945 MHz
925 MHz
200
25
10
12
250
945 MHz
14
925 MHz
30
300
960 MHz
960 MHz
Idq = 100 mA
16
960 MHz
Pin = .45 W
Idq = 100 mA
Pin = .45 W
Vdd =28 V
Vdd = 28 V
350
18
Doc ID 12214 Rev 5
35
400
20
Figure 10. Return loss vs output power
Figure 12. Efficiency vs bias current
Figure 14. Output power vs
70
65
60
55
50
25
20
15
10
-10
-15
-20
-25
-30
-35
5
0
-5
0
0
0
0
2
50
Idq = 100 mA
0.5
gate voltage
Vdd =28 V
4
100
960 MHz
1
VGS, GATE BIAS VOLTAGE (V)
6
Idq, BIAS CURRENT (mA)
Pout, OUTPUT POWER (W)
150
1.5
8
945 MHz
200
10
945 MHz
2
Typical performance
250
12
945 MHz
2.5
925 MHz
14
925 MHz
300
Pin = .45 W
Vdd =28 V
16
Pin = .45 W
925 MHz
V
960 MHz
3
DD
350
= 28 V
18
960 MHz
3.5
400
2
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