BF1206,115 NXP Semiconductors, BF1206,115 Datasheet - Page 13
![MOSFET N-CH DUAL GATE 6V SOT363](/photos/5/31/53138/568-umt6_sot-363_sc-88__sot363_sml.jpg)
BF1206,115
Manufacturer Part Number
BF1206,115
Description
MOSFET N-CH DUAL GATE 6V SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BF1206115.pdf
(22 pages)
Specifications of BF1206,115
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
N-Channel Dual Gate
Frequency
400MHz
Gain
30dB
Voltage - Rated
6V
Current Rating
30mA
Noise Figure
1.3dB
Current - Test
18mA
Voltage - Test
5V
Configuration
Dual Dual Gate
Continuous Drain Current
30 mA
Drain-source Breakdown Voltage
6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
180 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934057297115
BF1206
BF1206
BF1206
BF1206
NXP Semiconductors
GRAPHS FOR AMPLIFIER b
2003 Nov 17
handbook, halfpage
Dual N-channel dual-gate MOS-FET
(1) V
(2) V
(3) V
(4) V
Fig.19 Transfer characteristics; typical values;
V
DS
(mA)
I D
= 5 V; T
30
20
10
G2-S
G2-S
G2-S
G2-S
0
0
amplifier b.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
j
= 25 C.
0.5
(5) V
(6) V
(7) V
1
G2-S
G2-S
G2-S
(2)
(3)
= 2 V.
= 1.5 V.
= 1 V.
(1)
1.5
V G1-S (V)
(4)
(5)
(6)
(7)
MLE272
2
13
handbook, halfpage
Fig.20 Output characteristics; typical values;
V
(1) V
(2) V
(3) V
(4) V
G2-S
(mA)
I D
32
24
16
8
0
= 4 V; T
G1-S
G1-S
G1-S
G1-S
0
amplifier b.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 1.2 V.
j
= 25 C.
2
(5) V
(6) V
(7) V
G1-S
G1-S
G1-S
4
= 1.1 V.
= 1 V.
= 0.9 V.
Product specification
(1)
(2)
(3)
(4)
(5)
(6)
(7)
V DS (V)
BF1206
MLE273
6