BF1206,115 NXP Semiconductors, BF1206,115 Datasheet - Page 8

• Manufacturer Part Number: BF1206,115
• Description: MOSFET N-CH DUAL GATE 6V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1206,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 30dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 1.3dB
• Current - Test: 18mA
• Voltage - Test: 5V
• Configuration: Dual Dual Gate
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057297115; BF1206; BF1206

NXP Semiconductors
2003 Nov 17
handbook, halfpage
Dual N-channel dual-gate MOS-FET
(1) R
(2) R
(3) R
(4) R
Fig.9
V
G2-S
(mA)
I D
40
32
24
16
8
0
= 4 V; T
G1
G1
G1
G1
0
= 56 k.
= 68 k.
= 82 k.
= 91 k.
Drain current as a function of gate 1 (V
and drain supply voltage; typical values;
amplifier a.
j
= 25 C; R
2
G1
= 150 k (connected to V
3
(5) R
(6) R
(7) R
V GG = V DS (V)
G1
G1
G1
= 100 k.
= 120 k.
= 150 k.
6
MLE288
GG
(1)
(2)
(3)
(4)
(5)
(6)
(7)
); see Fig.35.
8
GG
)
8
handbook, halfpage
V
(1) V
(2) V
(3) V
Fig.10 Drain current as a function of gate 2
DS
(mA)
I D
12
= 5 V; T
20
16
GG
GG
GG
8
4
0
0
= 5 V.
= 4.5 V.
= 4 V.
voltage; typical values; amplifier a.
j
= 25 C; R
G1
2
= 91 k (connected to V
(4) V
(5) V
GG
GG
= 3.5 V.
= 3 V.
4
Product specification
V G2-S (V)
GG
(1)
(2)
(3)
(4)
(5)
BF1206
MLE292
); see Fig.35.
6