BF1206,115 NXP Semiconductors, BF1206,115 Datasheet - Page 3
![MOSFET N-CH DUAL GATE 6V SOT363](/photos/5/31/53138/568-umt6_sot-363_sc-88__sot363_sml.jpg)
BF1206,115
Manufacturer Part Number
BF1206,115
Description
MOSFET N-CH DUAL GATE 6V SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BF1206115.pdf
(22 pages)
Specifications of BF1206,115
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
N-Channel Dual Gate
Frequency
400MHz
Gain
30dB
Voltage - Rated
6V
Current Rating
30mA
Noise Figure
1.3dB
Current - Test
18mA
Voltage - Test
5V
Configuration
Dual Dual Gate
Continuous Drain Current
30 mA
Drain-source Breakdown Voltage
6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
180 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934057297115
BF1206
BF1206
BF1206
BF1206
NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. T
THERMAL CHARACTERISTICS
2003 Nov 17
BF1206
Per MOS-FET; unless otherwise specified
V
I
I
I
P
T
T
R
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
SYMBOL
D
G1
G2
TYPE NUMBER
SYMBOL
stg
j
DS
tot
Dual N-channel dual-gate MOS-FET
th j-s
s
is the temperature at the soldering point of the source lead.
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
PARAMETER
NAME
plastic surface mounted package; 6 leads
PARAMETER
T
s
CAUTION
107 C; note 1
3
DESCRIPTION
PACKAGE
CONDITIONS
VALUE
240
65
MIN.
Product specification
6
30
10
10
180
+150
150
MAX.
BF1206
VERSION
SOT363
UNIT
K/W
V
mA
mA
mA
mW
C
C
UNIT