BF1206,115 NXP Semiconductors, BF1206,115 Datasheet - Page 19
![MOSFET N-CH DUAL GATE 6V SOT363](/photos/5/31/53138/568-umt6_sot-363_sc-88__sot363_sml.jpg)
BF1206,115
Manufacturer Part Number
BF1206,115
Description
MOSFET N-CH DUAL GATE 6V SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BF1206115.pdf
(22 pages)
Specifications of BF1206,115
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
N-Channel Dual Gate
Frequency
400MHz
Gain
30dB
Voltage - Rated
6V
Current Rating
30mA
Noise Figure
1.3dB
Current - Test
18mA
Voltage - Test
5V
Configuration
Dual Dual Gate
Continuous Drain Current
30 mA
Drain-source Breakdown Voltage
6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
180 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934057297115
BF1206
BF1206
BF1206
BF1206
NXP Semiconductors
PACKAGE OUTLINE
2003 Nov 17
Plastic surface-mounted package; 6 leads
Dual N-channel dual-gate MOS-FET
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT363
1.1
0.8
A
max
0.1
A 1
6
1
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
5
2
2.2
1.8
b p
D
JEDEC
1.35
1.15
E
4
3
REFERENCES
0
1.3
e
w
B
M
B
0.65
e
1
SC-88
JEITA
scale
19
1
H E
2.2
2.0
A
0.45
0.15
L p
A 1
2 mm
0.25
0.15
Q
H E
E
0.2
v
detail X
PROJECTION
0.2
EUROPEAN
w
L p
Q
0.1
y
A
c
Product specification
X
v
ISSUE DATE
M
04-11-08
06-03-16
BF1206
A
SOT363