BLF6G10-45,112 NXP Semiconductors, BLF6G10-45,112 Datasheet - Page 87

TRANS LDMOS 1GHZ SOT608A

BLF6G10-45,112

Manufacturer Part Number
BLF6G10-45,112
Description
TRANS LDMOS 1GHZ SOT608A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G10-45,112

Package / Case
SOT-608A
Transistor Type
LDMOS
Frequency
922.5MHz
Gain
22.5dB
Voltage - Rated
65V
Current Rating
13A
Current - Test
350mA
Voltage - Test
28V
Power - Output
1W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
- 0.5 V, 13 V
Continuous Drain Current
13 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060888112
BLF6G10-45
BLF6G10-45
MOSFET driver transistors (new)
Package
P
Contains
General-purpose transistors
General-purpose transistors
General-purpose transistors
General-purpose transistors
Switching transistors -
reduced storage time
Switching transistors -
reduced storage time
Low V
Low V
Low V
Low V
tot
CEsat
CEsat
CEsat
CEsat
(BISS) transistors -
high h
(BISS) transistors -
high h
FE
FE
and I
and I
C
C
I
0.1
0.1
0.1
0.1
0.6
0.6
1.0
1.0
C
(A)
I
0.2
0.2
0.2
0.2
1.2
1.2
2.0
2.0
CM
(A)
SOT457 (SC-74)
600 mW
PMD9050D
SOT346 (SC-59A)
250 mW
PMD4001K (NPN)
PMD5001K (PNP)
PMD4002K (NPN)
PMD5002K (PNP)
PMD4003K (NPN)
PMD5003K (PNP)
SOT457 (SC-74)
600 mW
R1 = R2 (kΩ)
2.2
4.7
10
PMD9010D
PMD9001D
PMD9002D
PMD9003D
SOT457 (SC-74)
600 mW
BCV65 (SOT143B)
PMD2001D
PMD3001D
7

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