BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 4

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

NXP Semiconductors
BLF6G10LS-135R_1
Product data sheet
Fig 2.
(dB)
G
p
23
22
21
20
19
0
V
Two-tone CW power gain and drain efficiency
as function of peak envelope load power;
typical values
DS
G
D
p
= 28 V; I
25
Dq
= 950 mA; f
Fig 1.
50
1
V
One-tone CW power gain and drain efficiency as function of load power; typical
values
= 881 MHz ( 100 kHz).
DS
= 28 V; I
75
P
L(PEP)
001aah865
Dq
(W)
Rev. 01 — 17 November 2008
(dB)
G
= 950 mA; f = 881 MHz.
100
p
24
23
22
21
20
19
60
45
30
15
0
(%)
0
D
G
D
p
40
Fig 3.
(dBc)
IMD
20
30
40
50
60
0
V
Two-tone CW intermodulation distortion as a
function of peak envelope load power;
typical values
80
DS
= 28 V; I
BLF6G10LS-135R
25
120
Dq
= 950 mA; f
P
001aah864
L
(W)
50
160
Power LDMOS transistor
75
60
45
30
15
0
1
(%)
= 881 MHz ( 100 kHz).
D
75
P
© NXP B.V. 2008. All rights reserved.
L(PEP)
001aah866
IMD3
IMD5
IMD7
(W)
100
4 of 10