BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 6

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

NXP Semiconductors
Table 8.
[1]
[2]
BLF6G10LS-135R_1
Product data sheet
Component
C1, C3, C10, C14,
C17
C2, C4, C5
C6, C7
C8, C9, C12, C13
C11, C15
C16
C18, C19, C20
L1
Q1
R1, R2, R3
Fig 7.
American Technical Ceramics type 100B or capacitor of same quality.
TDK or capacitor of same quality.
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
See
The drawing is not to scale.
Component layout
List of components (see
Table 8
for list of components.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
ferrite SMD bead
BLF6G10LS-135R
SMD resistor
R1
C1
C3
Figure 6
800 -1000 MHz
C2
V1.0
IN
and 7).
Rev. 01 — 17 November 2008
C4
C5
R2
Value
68 pF
8.2 pF
10 pF
100 nF
4.7 F; 50 V
3.0 pF
220 F; 63 V
9.1 ; 0.1 W
Q1
800 -1000 MHz
C6
C7
C8
OUT
V1.0
C9
C12
[1]
[1]
[1]
[2]
[1]
C10 C11
C13
Remarks
solder vertically
solder vertically
solder vertically
Vishay
solder vertically
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
C14
BLF6G10LS-135R
C15
or capacitor of same quality.
C18
C19
r
= 3.5 and thickness = 0.76 mm.
Power LDMOS transistor
L1
© NXP B.V. 2008. All rights reserved.
R3
C16
C20
C17
001aah870
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