BLF573S,112 NXP Semiconductors, BLF573S,112 Datasheet - Page 10
BLF573S,112
Manufacturer Part Number
BLF573S,112
Description
TRANSISTOR RF LDMOS SOT502B
Manufacturer
NXP Semiconductors
Specifications of BLF573S,112
Transistor Type
LDMOS
Frequency
225MHz
Gain
27.2dB
Voltage - Rated
110V
Current Rating
42A
Current - Test
900mA
Voltage - Test
50V
Power - Output
300W
Package / Case
SOT502B
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
42A
Drain Source Voltage (max)
110V
Output Power (max)
300W
Power Gain (typ)@vds
27.2@50VdB
Frequency (max)
225MHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
20S
Drain Source Resistance (max)
90(Typ)@6Vmohm
Input Capacitance (typ)@vds
300@50VpF
Output Capacitance (typ)@vds
103@50VpF
Reverse Capacitance (typ)
2.3@50VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
70%
Mounting
Surface Mount
Mode Of Operation
CW
Number Of Elements
1
Vswr (max)
13
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934062175112
NXP Semiconductors
BLF573S_2
Product data sheet
Fig 10. Component layout for class-AB production test circuit
C1
C2
C3
C4
C5
Rev. 02 — 17 February 2009
C7
C6
C9
C8
R1
L1
C20
B1
C10
C13
C11 C12
C19
HF / VHF power LDMOS transistor
C14
C15
BLF573S
© NXP B.V. 2009. All rights reserved.
L2
C16
C17
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