BLF573S,112 NXP Semiconductors, BLF573S,112 Datasheet - Page 4

• Manufacturer Part Number: BLF573S,112
• Description: TRANSISTOR RF LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF573S,112

• Transistor Type: LDMOS
• Frequency: 225MHz
• Gain: 27.2dB
• Voltage - Rated: 110V
• Current Rating: 42A
• Current - Test: 900mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: SOT502B
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 42A
• Drain Source Voltage (max): 110V
• Output Power (max): 300W
• Power Gain (typ)@vds: 27.2@50VdB
• Frequency (max): 225MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 20S
• Drain Source Resistance (max): 90(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 300@50VpF
• Output Capacitance (typ)@vds: 103@50VpF
• Reverse Capacitance (typ): 2.3@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 70%
• Mounting: Surface Mount
• Mode Of Operation: CW
• Number Of Elements: 1
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934062175112

NXP Semiconductors
7. Application information
BLF573S_2
Product data sheet
6.1 Ruggedness in class-AB operation
7.1 Impedance information
The BLF573S is capable of withstanding a load mismatch corresponding to
VSWR = 13 : 1 through all phases under the following conditions: V
I
Table 8.
Measured Z
f
MHz
225
Dq
Fig 1.
Fig 2.
= 900 mA; P
V
Output capacitance as a function of drain-source voltage; capacitance value
without internal matching
Definition of transistor impedance
GS
Typical impedance
S
and Z
= 0 V; f = 1 MHz.
L
= 300 W; f = 225 MHz.
L
test circuit impedances.
C
Rev. 02 — 17 February 2009
(pF)
oss
800
600
400
200
0
0
Z
0.7 + j2.0
S
10
gate
Z
S
20
001aaf059
30
Z
drain
L
HF / VHF power LDMOS transistor
40
001aaj141
V
DS
(V)
Z
1.95 + j2.0
L
50
DS
BLF573S
= 50 V;
© NXP B.V. 2009. All rights reserved.
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