BLF573S,112 NXP Semiconductors, BLF573S,112 Datasheet - Page 3

• Manufacturer Part Number: BLF573S,112
• Description: TRANSISTOR RF LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF573S,112

• Transistor Type: LDMOS
• Frequency: 225MHz
• Gain: 27.2dB
• Voltage - Rated: 110V
• Current Rating: 42A
• Current - Test: 900mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: SOT502B
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 42A
• Drain Source Voltage (max): 110V
• Output Power (max): 300W
• Power Gain (typ)@vds: 27.2@50VdB
• Frequency (max): 225MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 20S
• Drain Source Resistance (max): 90(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 300@50VpF
• Output Capacitance (typ)@vds: 103@50VpF
• Reverse Capacitance (typ): 2.3@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 70%
• Mounting: Surface Mount
• Mode Of Operation: CW
• Number Of Elements: 1
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934062175112

NXP Semiconductors
6. Characteristics
BLF573S_2
Product data sheet
Table 6.
T
Table 7.
Mode of operation: CW; f = 225 MHz; RF performance at V
unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
V
V
V
I
I
I
g
R
C
C
C
Symbol Parameter
G
RL
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
DS(on)
rs
iss
oss
p
= 25 C unless otherwise specified.
in
drain-source breakdown voltage V
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
input capacitance
output capacitance
power gain
input return loss
drain efficiency
DC characteristics
RF characteristics
Rev. 02 — 17 February 2009
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 MHz
Conditions
P
P
P
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
GS
GS
L
L
L
= 12.49 A
= 300 W
= 300 W
= 300 W
= 10 V; I
= 50 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
= 0 V; V
= 0 V; V
GS(th)
GS(th)
D
DS
DS
DS
DS
D
D
D
= 3.75 mA
+ 3.75 V;
+ 3.75 V;
DS
HF / VHF power LDMOS transistor
= 375 mA
= 900 mA
= 18.75 A
DS
= 50 V
= 50 V;
= 50 V;
= 50 V;
= 0 V
= 50 V; I
Dq
Min
110
1.25
1.45
-
44
-
-
-
-
-
-
Min
26
10
67
= 900 mA; T
BLF573S
© NXP B.V. 2009. All rights reserved.
Typ
-
1.7
1.95
-
56
-
20
0.09
2.3
300
103
Typ
27.2
13
70
case
Max
-
2.25
2.45
4.2
-
420
-
-
-
-
-
Max
28.4
-
-
= 25 C;
3 of 14
Unit
V
V
V
A
nA
S
pF
pF
pF
Unit
dB
dB
%
A