BLF573S,112 NXP Semiconductors, BLF573S,112 Datasheet - Page 7

• Manufacturer Part Number: BLF573S,112
• Description: TRANSISTOR RF LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF573S,112

• Transistor Type: LDMOS
• Frequency: 225MHz
• Gain: 27.2dB
• Voltage - Rated: 110V
• Current Rating: 42A
• Current - Test: 900mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: SOT502B
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 42A
• Drain Source Voltage (max): 110V
• Output Power (max): 300W
• Power Gain (typ)@vds: 27.2@50VdB
• Frequency (max): 225MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 20S
• Drain Source Resistance (max): 90(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 300@50VpF
• Output Capacitance (typ)@vds: 103@50VpF
• Reverse Capacitance (typ): 2.3@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 70%
• Mounting: Surface Mount
• Mode Of Operation: CW
• Number Of Elements: 1
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934062175112

NXP Semiconductors
BLF573S_2
Product data sheet
Fig 6.
(1) P
(2) P
V
Load power as function of input power; typical values
DS
L(1dB)
L(3dB)
= 50 V; I
= 55.2 dBm (330 W)
= 55.8 dBm (380 W)
Dq
= 900 mA; f = 225 MHz.
(dBm)
P
L
60
58
56
54
52
50
24
Rev. 02 — 17 February 2009
26
28
Ideal P
(1)
P
L
L
30
(2)
32
P
001aaj614
i
(dBm)
34
HF / VHF power LDMOS transistor
BLF573S
© NXP B.V. 2009. All rights reserved.
7 of 14