BLF6G10LS-200,118 NXP Semiconductors, BLF6G10LS-200,118 Datasheet - Page 87

• Manufacturer Part Number: BLF6G10LS-200,118
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-200,118

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 20.2dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 40W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 49 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060895118; BLF6G10LS-200 /T3; BLF6G10LS-200 /T3

MOSFET driver transistors (new)
Package
P
Contains
General-purpose transistors
General-purpose transistors
General-purpose transistors
General-purpose transistors
Switching transistors -
reduced storage time
Switching transistors -
reduced storage time
Low V
Low V
Low V
Low V
tot
CEsat
CEsat
CEsat
CEsat
(BISS) transistors -
high h
(BISS) transistors -
high h
FE
FE
and I
and I
C
C
I
0.1
0.1
0.1
0.1
0.6
0.6
1.0
1.0
C
(A)
I
0.2
0.2
0.2
0.2
1.2
1.2
2.0
2.0
CM
(A)
SOT457 (SC-74)
600 mW
PMD9050D
SOT346 (SC-59A)
250 mW
PMD4001K (NPN)
PMD5001K (PNP)
PMD4002K (NPN)
PMD5002K (PNP)
PMD4003K (NPN)
PMD5003K (PNP)
SOT457 (SC-74)
600 mW
R1 = R2 (kΩ)
2.2
4.7
10
PMD9010D
PMD9001D
PMD9002D
PMD9003D
SOT457 (SC-74)
600 mW
BCV65 (SOT143B)
PMD2001D
PMD3001D
7