BLF6G10LS-200,118 NXP Semiconductors, BLF6G10LS-200,118 Datasheet - Page 9

• Manufacturer Part Number: BLF6G10LS-200,118
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-200,118

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 20.2dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 40W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 49 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060895118; BLF6G10LS-200 /T3; BLF6G10LS-200 /T3

Digital video encoders (continued)
(1)
Product
Text and graphics
Teletext insertion
Closed caption
(Line 21)
Color-bar generator
Widescreen signalling
VPS (Video Program Service)
General
Supply voltage
Fast I
(400 kHz)
Remote Genlock
via RTC input
Package
Availability
Extended temperature version
Status
License required
2
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3.3 V
•
•
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•
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QFP44, BGA156
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SAA7102/
SAA7103
3.3 V
•
•
•
•
•
•
Production
SAA7120/
SAA7121
QFP44
3.3 V
•
•
•
•
•
•
Recommended for new designs
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SAA7129A
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SAF7129A
QFP44
3.3 V
•
•
•
•
•
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Production
SAA7104/
SAA7105
3.3 V
•
•
•
•
•
•
•
9