BG 3230 E6327 Infineon Technologies, BG 3230 E6327 Datasheet - Page 2

• Manufacturer Part Number: BG 3230 E6327
• Description: MOSFET N-CH DUAL 8V SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 3230 E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Current - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BG3230E6327XT; SP000013594

1 For calculation of R
Thermal Resistance
Parameter
Channel - soldering point
Electrical Characteristics
Parameter
DC Characteristics
Drain-source breakdown voltage
I
Gate1-source breakdown voltage
+ I
Gate2 source breakdown voltage
± I
Gate1-source leakage current
V
Gate 2 source leakage current
± V
Drain current
V
Operating current (selfbiased)
V
Gate2-source pinch-off voltage
V
D
G1S
DS
DS
DS
G1S
G2S
= 100 µA, V
G2S
= 5 V, V
= 5 V, V
= 5 V, I
= 6 V, V
= 10 mA, V
= 10 mA, V
= 6 V, V
D
G1S
G2S
G2S
= 100 µA
G1S
G1S
thJA
= 0 , V
= 4 V
G1S
G2S
= 0
= 0 , V
= 0 , V
please refer to Application Note Thermal Resistance
= 0 , V
= 0 , V
G2S
1)
G2S
DS
= 4 V
DS
DS
= 0
= 0
= 0
= 0
2
Symbol
V
+ V
± V
+ I
± I
I
I
V
DSS
DSO
(BR)DS
G2S(p)
G1SS
G2SS
Symbol
R
(BR)G1SS
(BR)G2SS
thchs
min.
12
6
6
-
-
-
-
-
BG3230_BG3230R
Values
≤ 280
Value
typ.
13
1
-
-
-
-
-
-
max.
100
15
15
50
50
2005-11-03
-
-
-
Unit
V
µA
nA
µA
mA
V
Unit
K/W