BG 3230 E6327 Infineon Technologies, BG 3230 E6327 Datasheet - Page 5

• Manufacturer Part Number: BG 3230 E6327
• Description: MOSFET N-CH DUAL 8V SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 3230 E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Current - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BG3230E6327XT; SP000013594

AGC characteristic AGC = ƒ(V
f = 200 MHz
Crossmodulation V
V
DS
dBµV
dB
120
100
-20
-30
-40
-50
-60
-70
-80
-90
= 5 V, R
90
80
0
0
0
0.5
g1
10
1
= 68 kΩ
1.5
20
unw
2
= (AGC)
30
2.5
G2S
3
dB
)
V
V
AGC
G2
50
4
5
AGC characteristic AGC = ƒ(V
f = 800 MHz
dB
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
0
0
0.5
1
1.5
BG3230_BG3230R
2
2.5
2005-11-03
G2S
3
)
V
V
G2
4