BG 3230 E6327 Infineon Technologies, BG 3230 E6327 Datasheet - Page 6

• Manufacturer Part Number: BG 3230 E6327
• Description: MOSFET N-CH DUAL 8V SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 3230 E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Current - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BG3230E6327XT; SP000013594

BG3230_BG3230R
Crossmodulation test circuit
V
V
AGC
DS
4n7
R1
2.2 µH
10 kOhm
4n7
4n7
RL
50 Ohm
4n7
R
GEN
50 Ohm
RG1
50 Ohm
V
GG
2005-11-03
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